Progress and outlook for STT-MRAM

Emerging


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  • DOI 10.5555/2132325.2132380
  • OpenAlex ID W2064720608
  • Type Conference-paper
  • Language EN
  • Published 07 Nov 2011
  • Pages 235
  • Source International Conference on Computer Aid…
  • FWCI 4.33
  • Added 10 Oct 2025
  • Updated 17 Oct 2026
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Progress and outlook for STT-MRAM

Conference-paper 2011 EN

New product applications have an increasing demand for a non-volatile memory (NVM) exhibiting higher speeds, extended endurance and lower power consumption as existing solutions are not fully capable to deliver on all of these attributes. Of the group of new NVMs, Phase-change RAM (PRAM), Resistive RAM (RRAM) and Spin-Transfer Torque based MRAM (STT-MRAM) [1–8], STT-MRAM has the most attractive co…

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6 authors
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1 Yiming Huai —
2 Yuchen Zhou —
3 Ioan Tudosa — —
4 R. Malmhäll — —
5 Rajiv Y. Ranjan — —
6 Jing Zhang —

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