Field driven STT-MRAM cell for reduced switching latency and…

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3
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2014
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  • DOI 10.1109/iscas.2014.6865599
  • OpenAlex ID W2053498663
  • Type Conference-paper
  • Language EN
  • Published 01 Jun 2014
  • Pages 2173–2176
  • Source IEEE International Symposium on Circuits…
  • FWCI 2.10
  • Countries 1
  • Institutions 1
  • Added 10 Oct 2025
  • Updated 06 Oct 2026
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Field driven STT-MRAM cell for reduced switching latency and energy

Conference-paper 2014 EN

A field driven approach to STT-MRAM switching is proposed as a method for reducing the switching latency of an MTJ in high performance caches. An MRAM array model is presented to characterize the switching energy and maximum achievable reduction in energy using the field driven approach. The switching latency per bit is reduced by more than a factor of ten. The resultant switching energy per bit i…

3

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18

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3

Authors

2.10

FWCI

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3 authors
#AuthorInstitutionsORCID
1 Ravi Patel University of Rochester (US) —
2 Engin İpek University of Rochester (US)
3 Eby G. Friedman University of Rochester (US)

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