Pulsed current switching of sub-micron MRAM cell

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2004
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  • DOI 10.1109/intmag.2003.1230565
  • OpenAlex ID W1490969355
  • Type Conference-paper
  • Language EN
  • Published 23 Mar 2004
  • Pages ED–03
  • Source IEEE International Magnetics Conference
  • Countries 1
  • Institutions 1
  • Added 10 Oct 2025
  • Updated 06 Oct 2026
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Pulsed current switching of sub-micron MRAM cell

Conference-paper 2004 EN

In this paper, we will report measurement and simulation of switching of sub-micron MRAM cells and also investigate the effect of temperature on the pulsed current switching of such devices. we will compare detailed micromagnetic simulation of MRAM switching using a stochastic Landau-Lifshitz equation.

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4 authors
#AuthorInstitutionsORCID
1 Manoj K. Bhattacharyya Hewlett-Packard (United States… (US) —
2 Lung Tran Hewlett-Packard (United States… (US)
3 Janice H. Nickel Hewlett-Packard (United States… (US) —
4 Thomas C. Anthony Hewlett-Packard (United States… (US) —
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