Addressing the Thermal Issues of STT-MRAM From Compact Model…
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- DOI 10.1109/tnano.2018.2803340
- OpenAlex ID W2790862368
- Type Article
- Language EN
- Published 07 Feb 2018
- Volume 17 (2)
- Pages 345–352
- Source IEEE Transactions on Nanotechnology
- Publisher Institute of Electrical and Electro…
- FWCI 2.68
- Countries 2
- Institutions 4
- Added 29 Mar 2018
- Updated 25 Oct 2026
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Addressing the Thermal Issues of STT-MRAM From Compact Modeling to Design Techniques
Article 2018 EN Green
Spin transfer torque magnetic random access memory (STT-MRAM) possesses many desirable properties such as nonvolatility, fast access speed, unlimited endurance, and good compatibility with CMOS fabrication process. ITRS has highlighted the potential of STT-MRAM as one of the candidates for the next-generation universal memory technology. However, both the behaviors of the Magnetic Tunnel Junction…
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7 authors| # | Author | Institutions | ORCID |
|---|---|---|---|
| 1 | Liuyang Zhang | Beihang University (CN) | |
| 2 | Yuanqing Cheng | Beihang University (CN) | |
| 3 | Wang Kang | Beihang University (CN) | |
| 4 | Lionel Torres | Centre National de la Recherch… (FR) Université de Montpellier (FR) +1 | |
| 5 | Youguang Zhang | Beihang University (CN) | |
| 6 | Aida Todri‐Sanial | Centre National de la Recherch… (FR) Université de Montpellier (FR) +1 | |
| 7 | Weisheng S. Zhao | Beihang University (CN) |
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