A Smaller, Faster, and More Energy-Efficient Complementary STT-MRAM Cell Uses Three Transistors and a Ground Grid: More Is Actually Less

Spin-transfer torque magnetoresistance random access memory is a major contender for static random access memory replacement in embedded caches at advanced fin field effect transistor nodes. It suffers, however, from the low resistance difference between the bistable states of the magnetic tunnel junction (MTJ). Variability on MTJ resistance and access transistors makes reliable read-out even more…