An Overview of Nonvolatile Emerging Memories— Spintronics fo…
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- DOI 10.1109/jetcas.2016.2547704
- OpenAlex ID W2342993049
- Type Article
- Language EN
- Published 25 Apr 2016
- Volume 6 (2)
- Pages 109–119
- Source IEEE Journal on Emerging and Selected To…
- Publisher Institute of Electrical and Electro…
- FWCI 9.93
- Countries 1
- Institutions 2
- Added 10 Oct 2025
- Updated 24 Oct 2026
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An Overview of Nonvolatile Emerging Memories— Spintronics for Working Memories
Article 2016 EN
This paper reviews emerging nonvolatile random access memories (RAM) in recent years. It first benchmarks ferroelectric RAM (FeRAM), phase change RAM (PCRAM), resistive RAM (ReRAM), and spin-torque-transfer magnetic RAM (STT-MRAM), discussing each RAM's features and its applications. Then current status of spintronics developments including not only STT-MRAM but also nonvolatile logic LSI is descr…
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Authors & Affiliations
5 authors| # | Author | Institutions | ORCID |
|---|---|---|---|
| 1 | Tetsuo Endoh | Tohoku University (JP) Center for Innovative Integrat… (JP) | |
| 2 | Hiroki Koike | Tohoku University (JP) | |
| 3 | Shoji Ikeda | Tohoku University (JP) Center for Innovative Integrat… (JP) | |
| 4 | Takahiro Hanyu | Tohoku University (JP) Center for Innovative Integrat… (JP) | |
| 5 | Hideo Ohno | Tohoku University (JP) Center for Innovative Integrat… (JP) |
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