Recent progress of phase change memory (PCM) and resistive s…

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2010
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  • DOI 10.1109/icsict.2010.5667542
  • OpenAlex ID W1997464441
  • Type Conference-paper
  • Language EN
  • Published 01 Nov 2010
  • Volume 28
  • Pages 1055–1060
  • Source IEEE International Conference on Solid-S…
  • FWCI 2.18
  • Countries 1
  • Institutions 2
  • Added 10 Oct 2025
  • Updated 16 Oct 2026
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Recent progress of phase change memory (PCM) and resistive switching random access memory (RRAM)

Conference-paper 2010 EN Green

Conventional memories such as SRAM, DRAM, and FLASH have set a very high cost/performance standard. Yet, recent advances in new materials, device technologies and circuits have made many emerging memories attractive candidates for a new generation of memories. This paper gives an overview of our recent research work on phase change memory (PCM) and metal oxide resistive switching memory (RRAM).

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2.18

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8 authors
#AuthorInstitutionsORCID
1 H.‐S. Philip Wong Stanford SystemX Alliance Stanford University (US)
2 Sang‐Bum Kim Stanford SystemX Alliance Stanford University (US)
3 Byoungil Lee Stanford SystemX Alliance Stanford University (US) —
4 Marissa A. Caldwell Stanford SystemX Alliance Stanford University (US) —
5 Jiale Liang Stanford SystemX Alliance Stanford University (US)
6 Yi Wu Stanford SystemX Alliance Stanford University (US)
7 Rakesh Gnana David Jeyasingh Stanford SystemX Alliance Stanford University (US) —
8 Shimeng Yu Stanford SystemX Alliance Stanford University (US)
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