Spin‐Torque‐Transfer (STT) MRAM Engineering

Spin-torque transfer magnetoresistive random-access memory (STT-MRAM) is far more energy efficient than field MRAM. This chapter describes the memory operation and the performance of STT-MRAM. It discusses energy barriers as a function of a magnetic tunnel junction (MTJ) film stack and device structure. The chapter focuses on the switching properties. The discussion starts from a simple uniform ma…