Spin-transfer torque magnetic random access memory (STT-MRAM…
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- DOI 10.1145/2463585.2463589
- OpenAlex ID W2010216838
- Type Article
- Language EN
- Published 01 May 2013
- Volume 9 (2)
- Pages 1–35
- Source ACM Journal on Emerging Technologies in …
- Publisher Association for Computing Machinery
- FWCI 13.48
- Added 10 Oct 2025
- Updated 16 Oct 2026
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Spin-transfer torque magnetic random access memory (STT-MRAM)
Article 2013 EN
Spin-transfer torque magnetic random access memory (STT-MRAM) is a novel, magnetic memory technology that leverages the base platform established by an existing 100+nm node memory product called MRAM to enable a scalable nonvolatile memory solution for advanced process nodes. STT-MRAM features fast read and write times, small cell sizes of 6F 2 and potentially even smaller, and compatibility with…
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Authors & Affiliations
12 authors| # | Author | Institutions | ORCID |
|---|---|---|---|
| 1 | Dmytro Apalkov | — | — |
| 2 | A. V. Khvalkovskiy | — | — |
| 3 | Steven M. Watts | — | — |
| 4 | V. Nikitin | — | |
| 5 | Xueti Tang | — | — |
| 6 | Daniel K. Lottis | — | — |
| 7 | Kiseok Moon | — | — |
| 8 | Xiao Luo | — | — |
| 9 | Eugene Chen | — | — |
| 10 | Adrian Ong | — | — |
| 11 | A. Driskill-Smith | — | — |
| 12 | Mohamad T. Krounbi | — | — |
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