Complimentary Polarizers STT-MRAM (CPSTT) for On-Chip Caches
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- DOI 10.1109/led.2012.2234079
- OpenAlex ID W2000777532
- Type Article
- Language EN
- Published 11 Jan 2013
- Volume 34 (2)
- Pages 232–234
- Source IEEE Electron Device Letters
- Publisher Institute of Electrical and Electro…
- FWCI 3.41
- Countries 1
- Institutions 1
- Added 10 Oct 2025
- Updated 16 Oct 2026
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Complimentary Polarizers STT-MRAM (CPSTT) for On-Chip Caches
Article 2013 EN
Spin-transfer torque magnetic random access memory devices (STT-MRAMs) show great promise as a candidate technology for on-chip caches. In this letter, we propose a new STT-MRAM bit-cell structure that is suitable for on-chip caches compared with the standard STT-MRAM bit-cell (SSC). Scalability of our proposed structure is studied with the aid of micromagnetic and circuit simulators. Results show…
29
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3.41
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2 authors| # | Author | Institutions | ORCID |
|---|---|---|---|
| 1 | Xuanyao Fong | Purdue University West Lafayet… (US) | |
| 2 | Kaushik Roy | Purdue University West Lafayet… (US) |
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