Complimentary Polarizers STT-MRAM (CPSTT) for On-Chip Caches

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2013
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Work Details
  • DOI 10.1109/led.2012.2234079
  • OpenAlex ID W2000777532
  • Type Article
  • Language EN
  • Published 11 Jan 2013
  • Volume 34 (2)
  • Pages 232–234
  • Source IEEE Electron Device Letters
  • Publisher Institute of Electrical and Electro…
  • FWCI 3.41
  • Countries 1
  • Institutions 1
  • Added 10 Oct 2025
  • Updated 16 Oct 2026
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Complimentary Polarizers STT-MRAM (CPSTT) for On-Chip Caches

Article 2013 EN

Spin-transfer torque magnetic random access memory devices (STT-MRAMs) show great promise as a candidate technology for on-chip caches. In this letter, we propose a new STT-MRAM bit-cell structure that is suitable for on-chip caches compared with the standard STT-MRAM bit-cell (SSC). Scalability of our proposed structure is studied with the aid of micromagnetic and circuit simulators. Results show…

29

Citations

18

References

2

Authors

3.41

FWCI

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2 authors
#AuthorInstitutionsORCID
1 Xuanyao Fong Purdue University West Lafayet… (US)
2 Kaushik Roy Purdue University West Lafayet… (US)

Data: OpenAlex