Nanocrystals in High-k Dielectric Stacks for Non-Volatile Me…
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- DOI 10.4028/www.scientific.net/ast.51.156
- OpenAlex ID W1968665333
- Type Conference-paper
- Language EN
- Published 01 Oct 2006
- Volume 51
- Pages 156–166
- Source Advances in science and technology
- Publisher Trans Tech Publications
- FWCI 2.65
- Countries 1
- Institutions 2
- Added 10 Oct 2025
- Updated 12 Oct 2026
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Nanocrystals in High-k Dielectric Stacks for Non-Volatile Memory Applications
Conference-paper 2006 EN Hybrid
The possibility to use semiconducting or metallic nanocrystals (ncs) embedded in a SiO2 matrix as charge storage elements in novel non volatile memory devices has been widely explored in the last ten years. The replacement of the continuous polysilicon layer of a conventional flash memory device by a 2-dimensional nanoparticle array presents several advantages but the fundamental trade-off between…
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6 authors| # | Author | Institutions | ORCID |
|---|---|---|---|
| 1 | Marco Fanciulli | — | |
| 2 | Michele Perego | — | |
| 3 | Caroline Bonafos | Centre d’Élaboration de Matéri… (FR) | |
| 4 | Anas Mouti | Centre National de la Recherch… (FR) Centre d’Élaboration de Matéri… (FR) | — |
| 5 | Sylvie Schamm‐Chardon | Centre National de la Recherch… (FR) Centre d’Élaboration de Matéri… (FR) | |
| 6 | G. Benassayag | Centre National de la Recherch… (FR) Centre d’Élaboration de Matéri… (FR) | — |
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