Nanocrystals in High-k Dielectric Stacks for Non-Volatile Me…

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2006
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  • DOI 10.4028/www.scientific.net/ast.51.156
  • OpenAlex ID W1968665333
  • Type Conference-paper
  • Language EN
  • Published 01 Oct 2006
  • Volume 51
  • Pages 156–166
  • Source Advances in science and technology
  • Publisher Trans Tech Publications
  • FWCI 2.65
  • Countries 1
  • Institutions 2
  • Added 10 Oct 2025
  • Updated 12 Oct 2026
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Nanocrystals in High-k Dielectric Stacks for Non-Volatile Memory Applications

Conference-paper 2006 EN Hybrid

The possibility to use semiconducting or metallic nanocrystals (ncs) embedded in a SiO2 matrix as charge storage elements in novel non volatile memory devices has been widely explored in the last ten years. The replacement of the continuous polysilicon layer of a conventional flash memory device by a 2-dimensional nanoparticle array presents several advantages but the fundamental trade-off between…

7

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25

References

6

Authors

2.65

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6 authors
#AuthorInstitutionsORCID
1 Marco Fanciulli —
2 Michele Perego —
3 Caroline Bonafos Centre d’Élaboration de Matéri… (FR)
4 Anas Mouti Centre National de la Recherch… (FR) Centre d’Élaboration de Matéri… (FR) —
5 Sylvie Schamm‐Chardon Centre National de la Recherch… (FR) Centre d’Élaboration de Matéri… (FR)
6 G. Benassayag Centre National de la Recherch… (FR) Centre d’Élaboration de Matéri… (FR) —

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