Superior Data Retention of Programmable Linear RAM (PLRAM) for Compute-in-Memory Application

In this work, we investigate the data retention of programmable linear random-access memory (PLRAM), where the geometry and structure of memory cells have been modified to decouple the program/erase operation and gate oxide. Since PLRAM utilizes the bidirectional Fowler-Nordheim tunneling during program and erase operations through the sidewall tunneling oxide, the gate oxide does not receive the…