Study of data retention for nanocrystal Flash memories

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2003
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  • DOI 10.1109/relphy.2003.1197800
  • OpenAlex ID W2171862007
  • Type Conference-paper
  • Language EN
  • Published 22 Dec 2003
  • Pages 506–512
  • Source IEEE International Reliability Physics S…
  • Publisher Institute of Electrical and Electro…
  • FWCI 7.36
  • Countries 1
  • Institutions 3
  • Added 10 Oct 2025
  • Updated 10 Oct 2026
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Study of data retention for nanocrystal Flash memories

Conference-paper 2003 EN

This work presents a detailed study of data retention for nanocrystal Flash memories. Data retention has been investigated in memory cells, with tunnel oxide thickness ranging from 2.8 to 4 nm. Assuming direct tunneling through the tunnel oxide as the main charge loss mechanism for uncycled memories, we show that a minimum thickness around 4.2 nm is required for the tunnel oxide to guarantee 10 ye…

38

Citations

14

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6

Authors

7.36

FWCI

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6 authors
#AuthorInstitutionsORCID
1 Christian Monzio Compagnoni Politecnico di Milano (IT)
2 Daniele Ielmini Politecnico di Milano (IT)
3 Alessandro Sottocornola Spinelli Istituto Nazionale per la Fisi… (IT)
4 Andrea Leonardo Lacaita Politecnico di Milano (IT)
5 C. Previtali Politecnico di Milano (IT) —
6 C. Gerardi STMicroelectronics (Italy) (IT)
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