Designed Workfunction Engineering of Double-Stacked Metal Na…
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- DOI 10.1109/ted.2008.2011677
- OpenAlex ID W2102924097
- Type Article
- Language EN
- Published 09 Feb 2009
- Volume 56 (3)
- Pages 377–382
- Source IEEE Transactions on Electron Devices
- Publisher Institute of Electrical and Electro…
- FWCI 3.43
- Countries 1
- Institutions 1
- Added 10 Oct 2025
- Updated 16 Oct 2026
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Designed Workfunction Engineering of Double-Stacked Metal Nanocrystals for Nonvolatile Memory Application
Article 2009 EN
A double-stacked nanocrystal (DSNC) flash memory is presented for improvement of both program/erase (P/E) speed and data retention time. Four combinations of nickel (Ni) and gold (Au) (Ni/Ni, Au/Au, Ni/Au, and Au/Ni) are used as charge storage DSNC materials and are compared from the perspective of memory performance. Through experimental results for P/E efficiency and retention time, the optimize…
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3.43
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5 authors| # | Author | Institutions | ORCID |
|---|---|---|---|
| 1 | Seong‐Wan Ryu | Korea Advanced Institute of Sc… (KR) | |
| 2 | Jong‐Won Lee | Korea Advanced Institute of Sc… (KR) | |
| 3 | Jin‐Woo Han | Korea Advanced Institute of Sc… (KR) | |
| 4 | Sungho Kim | Korea Advanced Institute of Sc… (KR) | |
| 5 | Yang‐Kyu Choi | Korea Advanced Institute of Sc… (KR) |
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