Magnetic Random&;#x02010;Access Memory
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- DOI 10.1002/9781119079415.ch5
- OpenAlex ID W3146164987
- Type Book-chapter
- Language EN
- Published 26 Nov 2016
- Pages 101–164
- FWCI 1.20
- Countries 1
- Institutions 5
- Added 10 Oct 2025
- Updated 16 Oct 2026
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Magnetic Random&;#x02010;Access Memory
Book-chapter 2016 EN
This chapter reviews the technology of magnetic random-access memory (MRAM) developed since 1996, with a particular focus on spin-transfer torque MRAM (STT-MRAM) and thermally assisted MRAM (TA-MRAM), which are currently receiving the most attention. After an introduction, Section 5.2 discusses the storage function in MRAM and how to design the storage layer in magnetic tunnel junctions (MTJ) to a…
11
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2
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1.20
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2 authors| # | Author | Institutions | ORCID |
|---|---|---|---|
| 1 | B. Diény | Centre National de la Recherch… (FR) Commissariat à l'Énergie Atomi… (FR) +3 | |
| 2 | Lucian Prejbeanu | Centre National de la Recherch… (FR) Commissariat à l'Énergie Atomi… (FR) +3 |
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