Progress and outlook for MRAM technology
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- DOI 10.1109/20.800991
- OpenAlex ID W2148274083
- Type Article
- Language EN
- Published 01 Jan 1999
- Volume 35 (5)
- Pages 2814–2819
- Source IEEE Transactions on Magnetics
- Publisher IEEE Magnetics Society
- FWCI 17.51
- Countries 1
- Institutions 1
- Added 10 Oct 2025
- Updated 23 Oct 2026
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Progress and outlook for MRAM technology
Article 1999 EN
We summarize the features of existing semiconductor memories and compare them to Magnetoresistive Random Access Memory (MRAM),a semiconductor memory with magnetic bits for nonvolatile storage. MRAM architectures based on Giant Magnetoresistance (GMR) and Magnetic Tunnel Junction (MTJ) cells are described. This paper will discuss our progress on improving the material structures, memory bits, therm…
447
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17.51
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6 authors| # | Author | Institutions | ORCID |
|---|---|---|---|
| 1 | S. Tehrani | Motorola (United States) (US) | — |
| 2 | Jon M. Slaughter | Motorola (United States) (US) | — |
| 3 | E. Y. Chen | Motorola (United States) (US) | — |
| 4 | Mark Durlam | Motorola (United States) (US) | — |
| 5 | Jing Shi | Motorola (United States) (US) | |
| 6 | M. DeHerren | — | — |
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