Investigation of multilayer WS2 flakes as charge trapping st…
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- DOI 10.1063/1.5024799
- OpenAlex ID W2807621749
- Type Article
- Language EN
- Published 04 Jun 2018
- Volume 112 (23)
- Source Applied Physics Letters
- Publisher American Institute of Physics
- FWCI 0.94
- Countries 3
- Institutions 3
- Added 10 Oct 2025
- Updated 27 Sep 2026
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Investigation of multilayer WS2 flakes as charge trapping stack layers in non-volatile memories
Article 2018 EN
In this study, the non-volatile flash memory devices utilize tungsten sulfide flakes as the charge trapping stack layers were fabricated. The sandwiched structure of Pd/ZHO/WS2/ZHO/WS2/SiO2/Si manifests a memory window of 2.26 V and a high density of trapped charges 4.88 × 1012/cm2 under a ±5 V gate sweeping voltage. Moreover, the data retention results of as-fabricated non-volatile memories demon…
20
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31
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4
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0.94
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4 authors| # | Author | Institutions | ORCID |
|---|---|---|---|
| 1 | Hong Wang | Hebei University (CN) | |
| 2 | Deliang Ren | Hebei University (CN) | — |
| 3 | Chao Lü | Southern Illinois University C… (US) | |
| 4 | Xiaobing Yan Corresponding | National University of Singapo… (SG) Hebei University (CN) |
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