DR
Deliang Ren

Highly Cited


20
Works
1,510
Citations
15
H-Index
Search Authors
Author Statistics
  • OpenAlex ID A5112386849
  • i10-Index 17
  • 2-Yr Mean Citedness 0.00
External Links

Deliang Ren

Also known as: Deliang Ren

20

Total Works

1,510

Citations

15

H-Index

17

i10-Index

Citation & Works Trend by Year
5 years active
Top Research Topics
Advanced Memory and Neural Computing (17) Ferroelectric and Negative Capacitance Devices (12) Phase-change materials and chalcogenides (7) TiO2 Photocatalysis and Solar Cells (3) Semiconductor materials and devices (3)
Recent Publications
15 shown
Year Publication Title Citations Action
2020 Memristors based on multilayer graphene electrodes for implementing a low-power neuromorphic electronic synapse Journal of Materials Chemistry C 64
2019 Robust Ag/ZrO 2 /WS 2 /Pt Memristor for Neuromorphic Computing ACS Applied Materials & Interfaces 217
2019 Memristors Based on the Hybrid Structure of Oxide and Boron Nitride Nanosheets Combining Memristive and Neuromorphic Functionalities physica status solidi (RRL) - Rapid Research Letters 10
2019 A Boolean OR gate implemented with an optoelectronic switching memristor Applied Physics Letters 27
2019 Vacancy‐Induced Synaptic Behavior in 2D WS 2 Nanosheet–Based Memristor for Low‐Power Neuromorphic Computing Small 420
2019 Flexible Transparent Organic Artificial Synapse Based on the Tungsten/Egg Albumen/Indium Tin Oxide/Polyethylene Terephthalate Memristor ACS Applied Materials & Interfaces 124
2019 Density effects of graphene oxide quantum dots on characteristics of Zr0.5Hf0.5O2 film memristors Applied Physics Letters 23
2019 Data Storage: Self‐Assembled Networked PbS Distribution Quantum Dots for Resistive Switching and Artificial Synapse Performance Boost of Memristors (Adv. Mater. 7/2019) Advanced Materials 2
2018 Synapse behavior characterization and physical mechanism of a TiN/SiO x /p-Si tunneling memristor device Journal of Materials Chemistry C 43
2018 Self‐Assembled Networked PbS Distribution Quantum Dots for Resistive Switching and Artificial Synapse Performance Boost of Memristors Advanced Materials 335
2018 An electronic synapse memristor device with conductance linearity using quantized conduction for neuroinspired computing Journal of Materials Chemistry C 67
2018 Characteristic investigation of a flexible resistive memory based on a tunneling junction of Pd/BTO/LSMO on mica substrate Applied Physics Letters 21
2018 A radiation-hardening Ta/Ta2O5-x/Al2O3/InGaZnO4 memristor for harsh electronics Applied Physics Letters 15
2018 Improving Zr0.5Hf0.5O2-based charge-trapped performance by graphene oxide quantum dots Functional Materials Letters 4
2018 Artificial electronic synapse characteristics of a Ta/Ta2O5-x/Al2O3/InGaZnO4 memristor device on flexible stainless steel substrate Applied Physics Letters 58

Data source: OpenAlex API