STT-MRAM for embedded memory applications from eNVM to last …
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- DOI 10.1109/s3s.2017.8308734
- OpenAlex ID W2790979425
- Type Conference-paper
- Language EN
- Published 01 Oct 2017
- Pages 1–4
- Source IEEE SOI-3D-Subthreshold Microelectronic…
- FWCI 2.53
- Added 29 Mar 2018
- Updated 16 Oct 2026
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STT-MRAM for embedded memory applications from eNVM to last level cache
Conference-paper 2017 EN
Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) is emerging as a leading candidate for a variety of embedded memory applications ranging from embedded NVM to working memory and last level cache. In this paper, we review recent breakthroughs that have brought perpendicular STT-MRAM to the cusp of mass production.
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21 authors| # | Author | Institutions | ORCID |
|---|---|---|---|
| 1 | Luc Thomas | — | — |
| 2 | Guenole Jan | — | — |
| 3 | Son Le | — | |
| 4 | Santiago Serrano-Guisan | — | — |
| 5 | Yuan-Jen Lee | — | — |
| 6 | Huanlong Liu | — | |
| 7 | Jian Zhu | — | — |
| 8 | Jodi M. Iwata-Harms | — | |
| 9 | Ru-Ying Tong | — | — |
| 10 | Sahil J. Patel | — | |
| 11 | Vignesh Sundar | — | — |
| 12 | Dongna Shen | — | — |
| 13 | Yi Tao Yang | — | |
| 14 | Renren He | — | — |
| 15 | Jesmin Haq | — | — |
| 16 | Zhongjian Teng | — | — |
| 17 | Vinh Lam | — | — |
| 18 | Paul Liu | — | — |
| 19 | Yu-Jen Wang | — | |
| 20 | Tom Zhong | — | — |
| 21 | Po-Kang Wang | — | — |
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