28nm STT-MRAM Array and Sense Amplifier

Emerging

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2019
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  • DOI 10.1109/mocast.2019.8741642
  • OpenAlex ID W2949498821
  • Type Conference-paper
  • Language EN
  • Published 01 May 2019
  • Pages 1–4
  • Source International Conference on Modern Circu…
  • FWCI 1.21
  • Countries 1
  • Institutions 1
  • Added 10 Oct 2025
  • Updated 05 Oct 2026
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28nm STT-MRAM Array and Sense Amplifier

Conference-paper 2019 EN

Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a replacement for currently used embedded non-volatile memory. We describe the characteristics of STT-MRAM and explore aspects of the memory array including trade-off in size, switching, read speed, temperature effects, layout, and power consumption.

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1 Jin Woong Kwak The University of Texas at Dal… (US)
2 Andrew Marshall The University of Texas at Dal… (US)
3 Harvey J. Stiegler The University of Texas at Dal… (US) —
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