Thermally Assisted Skyrmion Memory (TA-SKM)

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2020
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  • DOI 10.1109/led.2020.2986312
  • OpenAlex ID W3015744189
  • Type Article
  • Language EN
  • Published 07 Apr 2020
  • Volume 41 (6)
  • Pages 932–935
  • Source IEEE Electron Device Letters
  • Publisher Institute of Electrical and Electro…
  • FWCI 0.52
  • Countries 2
  • Institutions 2
  • Added 10 Oct 2025
  • Updated 12 Oct 2026
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Thermally Assisted Skyrmion Memory (TA-SKM)

Article 2020 EN

A novel thermally assisted skyrmion memory (TA-SKM) has been proposed and studied for the first time. Unidirectional current-induced spin transfer torque (STT) and Joule heating effect are used to induce the magnetization switching between uniform and skyrmion states in the free layer of a magnetic tunnel junction device. Physics-based simulations suggest that TA-SKM offers advantages including un…

7

Citations

35

References

5

Authors

0.52

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5 authors
#AuthorInstitutionsORCID
1 Shijiang Luo Huazhong University of Science… (CN)
2 Nuo Xu University of California, Berk… (US)
3 Yaoyuan Wang Huazhong University of Science… (CN)
4 Jeongmin Hong Huazhong University of Science… (CN)
5 Long You Huazhong University of Science… (CN)
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