Perpendicular STT-MRAM for high speed non-volatile embedded …
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- DOI 10.1109/intmag.2015.7157007
- OpenAlex ID W1600675549
- Type Conference-paper
- Language EN
- Published 01 May 2015
- Volume 115
- Pages 1
- Source IEEE International Magnetics Conference
- Added 24 Jun 2016
- Updated 14 Oct 2026
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Perpendicular STT-MRAM for high speed non-volatile embedded memory application
Conference-paper 2015 EN
The recent rise of mobile applications such as Internet of Things (IoT), wearable electronics, and context aware computing has renewed the search for a universal embedded memory technology [1]. Such a technology should combine fast read/write, low voltage operation, low power consumption, non-volatility, infinite endurance, with CMOS process compatibility. Magnetic Random Access Memory based on Sp…
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Authors & Affiliations
17 authors| # | Author | Institutions | ORCID |
|---|---|---|---|
| 1 | P. Wang | — | — |
| 2 | G. Jan | — | — |
| 3 | Luc Thomas | — | — |
| 4 | Y. Lee | — | — |
| 5 | Huajin Liu | — | — |
| 6 | Jianguo G. Zhu | — | |
| 7 | Son Le | — | |
| 8 | Ru-Ying Tong | — | — |
| 9 | K. Pi | — | — |
| 10 | Dongna Shen | — | — |
| 11 | R. He | — | |
| 12 | Jesmin Haq | — | — |
| 13 | Jeffrey W. Teng | — | |
| 14 | V. Lam | — | — |
| 15 | Y. Wang | — | — |
| 16 | Tom Zhong | — | — |
| 17 | Terry Torng | — | — |
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