Parallel nonvolatile programming of power-up states of SRAM …
Emerging
1
Citations3
Refs2017
Year
Search Works
Work Details
- DOI 10.1109/asicon.2017.8252502
- OpenAlex ID W2783549708
- Type Conference-paper
- Language EN
- Published 01 Oct 2017
- Volume 58
- Pages 418–421
- Source IEEE International Conference on ASIC (A…
- FWCI 0.39
- Countries 1
- Institutions 2
- Added 10 Oct 2025
- Updated 24 Oct 2026
External Links
MENU
0
Parallel nonvolatile programming of power-up states of SRAM cells
Conference-paper 2017 EN
In this paper, we propose a parallel programmable non-volatile memory using an ordinary static random access memory (SRAM). Parallel non-volatile programming of the power-up states of the entire SRAM array is achieved by simply applying high-voltage stress to the power supply terminal after storing inverted desired data in the SRAM array. Successful 2kbit non-volatile programming and recalling of…
1
Citations
3
References
4
Authors
0.39
FWCI
Citations by Year
Last 1 yearsTopics
Keywords
Authors & Affiliations
4 authors| # | Author | Institutions | ORCID |
|---|---|---|---|
| 1 | Toshiro Hiramoto | Institute of Industrial Scienc… (JP) The University of Tokyo (JP) | |
| 2 | T. Mizutani | Institute of Industrial Scienc… (JP) The University of Tokyo (JP) | |
| 3 | Kiyoshi Takeuchi | Institute of Industrial Scienc… (JP) The University of Tokyo (JP) | |
| 4 | Masaharu Kobayashi | Institute of Industrial Scienc… (JP) The University of Tokyo (JP) |
Related Works
10Data: OpenAlex