Parallel nonvolatile programming of power-up states of SRAM …

Emerging


1
Citations
3
Refs
2017
Year
Search Works
Work Details
  • DOI 10.1109/asicon.2017.8252502
  • OpenAlex ID W2783549708
  • Type Conference-paper
  • Language EN
  • Published 01 Oct 2017
  • Volume 58
  • Pages 418–421
  • Source IEEE International Conference on ASIC (A…
  • FWCI 0.39
  • Countries 1
  • Institutions 2
  • Added 10 Oct 2025
  • Updated 24 Oct 2026
MENU
0

Parallel nonvolatile programming of power-up states of SRAM cells

Conference-paper 2017 EN

In this paper, we propose a parallel programmable non-volatile memory using an ordinary static random access memory (SRAM). Parallel non-volatile programming of the power-up states of the entire SRAM array is achieved by simply applying high-voltage stress to the power supply terminal after storing inverted desired data in the SRAM array. Successful 2kbit non-volatile programming and recalling of…

1

Citations

3

References

4

Authors

0.39

FWCI

Citations by Year
Last 1 years
Topics
Keywords
Authors & Affiliations
4 authors
#AuthorInstitutionsORCID
1 Toshiro Hiramoto Institute of Industrial Scienc… (JP) The University of Tokyo (JP)
2 T. Mizutani Institute of Industrial Scienc… (JP) The University of Tokyo (JP)
3 Kiyoshi Takeuchi Institute of Industrial Scienc… (JP) The University of Tokyo (JP)
4 Masaharu Kobayashi Institute of Industrial Scienc… (JP) The University of Tokyo (JP)

Data: OpenAlex