Experimental study of Single Event Upsets on deep submicron …
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- DOI 10.1109/phm.2017.8079299
- OpenAlex ID W2766443086
- Type Conference-paper
- Language EN
- Published 01 Jul 2017
- Pages 1–4
- Source Prognostics and System Health Management…
- Countries 1
- Institutions 2
- Added 10 Oct 2025
- Updated 21 Oct 2026
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Experimental study of Single Event Upsets on deep submicron and nano devices in space
Conference-paper 2017 EN
The Single Event Upsets on deep submicron and nano devices are analyzed. The Single Event Upsets on 0.18μm Static Random Access Memory in space orbits are measured. The measurement results show that the Single Event Upset (SEU) rates of 0.18μm Static Random Access Memory (SRAM) in Low earth orbit (LEO) are about one order of magnitude higher than geosynchronous orbit (GEO). The proton and heavy io…
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8 authors| # | Author | Institutions | ORCID |
|---|---|---|---|
| 1 | Qingkui Yu | China Academy of Space Technol… (CN) | |
| 2 | Yi Sun | China Academy of Space Technol… (CN) | — |
| 3 | Lei Luo | China Academy of Space Technol… (CN) | |
| 4 | Bo Mei | China Academy of Space Technol… (CN) | |
| 5 | Zhichao Wei | China Academy of Space Technol… (CN) | |
| 6 | Ming Zhu | China Academy of Space Technol… (CN) | |
| 7 | Min An Tang | China Academy of Space Technol… (CN) | |
| 8 | Shufen Liu | China Academy of Space Technol… (CN) Beijing Institute of Control E… (CN) |
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