Extreme latchup susceptibility in modern commercial-off-the-…
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- DOI 10.1109/redw.2005.1532657
- OpenAlex ID W1909296377
- Type Conference-paper
- Language EN
- Published 15 Nov 2005
- Pages 1–7
- Source IEEE Radiation Effects Data Workshop (RE…
- FWCI 1.65
- Countries 1
- Institutions 2
- Added 10 Oct 2025
- Updated 05 Oct 2026
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Extreme latchup susceptibility in modern commercial-off-the-shelf (COTS) monolithic 1m and 4M CMOS static random-access memory (SRAM) devices
Conference-paper 2005 EN
Recent SEE testing of 1M and 4M monolithic SRAMs at Brookhaven National Laboratories has shown an extreme sensitivity to single-event latchup (SEL). We have observed SEL at the minimum heavy-ion LET available at Brookhaven, 0.375 MeV-cm/sup 2//mg.
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2 authors| # | Author | Institutions | ORCID |
|---|---|---|---|
| 1 | Tomas Page | Raytheon (United States) | — |
| 2 | Joseph M. Benedetto | Alliant Techsystems (United St… (US) | — |
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