Dry Etching of Magnetic Tunnel Junction Stacks in a CH 3 COO…

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  • OpenAlex ID W2740721113
  • Type Article
  • Language EN
  • Published 01 Jan 2015
  • Added 10 Oct 2025
  • Updated 06 Nov 2025
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Dry Etching of Magnetic Tunnel Junction Stacks in a CH 3 COOH/Ar Gas Mixture

Article 2015 EN

Currently available semiconductor memory devices are primarily composed of Dynamic Random Access Memory (DRAM), Static Random Access Memory (SRAM) and flash memories, which are based on combinations of capacitors and transistors. Even though this technology in the early 1970's, successful efforts have been made to increase their storage density and decrease their prices. Nevertheless, use of these…

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3 authors
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1 Adrian Adalberto Garay — —
2 Ji Hyun Choi — —
3 Chee Won Chung —

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