A Strategy to Design High‐Density Nanoscale Devices utilizin…
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- DOI 10.1002/adma.201701048
- PMID https://pubmed.ncbi.nlm.nih.gov/28558134
- OpenAlex ID W2620104754
- Type Article
- Language EN
- Published 30 May 2017
- Volume 29 (29)
- Source Advanced Materials
- FWCI 8.50
- Countries 1
- Institutions 1
- Added 10 Oct 2025
- Updated 12 Oct 2026
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A Strategy to Design High‐Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials
Article 2017 EN
The demand for high memory density has increased due to increasing needs of information storage, such as big data processing and the Internet of Things. Organic–inorganic perovskite materials that show nonvolatile resistive switching memory properties have potential applications as the resistive switching layer for next‐generation memory devices, but, for practical applications, these materials sh…
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2 authors| # | Author | Institutions | ORCID |
|---|---|---|---|
| 1 | Bohee Hwang | Pohang University of Science a… (KR) | — |
| 2 | Jang‐Sik Lee Corresponding | Pohang University of Science a… (KR) |
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