A novel cell charge evaluation scheme and test method for 4 …

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2003
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  • DOI 10.1109/icvc.1999.820905
  • OpenAlex ID W2097556621
  • Type Conference-paper
  • Language EN
  • Published 20 Jan 2003
  • Pages 281–284
  • Countries 1
  • Institutions 2
  • Added 10 Oct 2025
  • Updated 22 Sep 2026
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A novel cell charge evaluation scheme and test method for 4 Mb nonvolatile ferroelectric RAM

Conference-paper 2003 EN

This paper proposes a novel method to evaluate the real cell ferroelectric capacitor with 4 Mb nonvolatile ferroelectric RAM which has a Cell Charge Evaluation Scheme (CCES). The charge value and the distribution of the memory cell ferroelectric capacitor can be evaluated by the CCES. Additionally, it can easily screen out weak bits which have smaller charges than normal cells by using the CCES as…

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6 authors
#AuthorInstitutionsORCID
1 Byung-Gil Jeon Samsung (South Korea) (KR) Samsung Electronics (South Kor… (KR) —
2 Moon-Kyu Choi Samsung (South Korea) (KR) Samsung Electronics (South Kor… (KR) —
3 Seung-Gyu Oh Samsung (South Korea) (KR) Samsung Electronics (South Kor… (KR) —
4 Yeonbae Chung Samsung (South Korea) (KR) Samsung Electronics (South Kor… (KR)
5 Kang-Deog Suh Samsung (South Korea) (KR) Samsung Electronics (South Kor… (KR) —
6 Kinam Kim Samsung (South Korea) (KR) Samsung Electronics (South Kor… (KR)

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