Nonvolatile SRAM Cell

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66
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2006
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Work Details
  • DOI 10.1109/iedm.2006.346730
  • OpenAlex ID W2004369723
  • Type Conference-paper
  • Language EN
  • Published 01 Jan 2006
  • Pages 1–4
  • Source Technical digest - International Electro…
  • Publisher Institute of Electrical and Electro…
  • FWCI 4.24
  • Countries 2
  • Institutions 3
  • Added 10 Oct 2025
  • Updated 16 Oct 2026
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Nonvolatile SRAM Cell

Conference-paper 2006 EN

A nonvolatile SRAM cell with two back-up nonvolatile memory devices is proposed. This novel cell offers nonvolatile storage, thus allowing selected blocks of SRAM to be powered down during operation. There is no area penalty. A slight performance penalty is anticipated

66

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1

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8

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4.24

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8 authors
#AuthorInstitutionsORCID
1 Wei Wang Stanford SystemX Alliance Stanford University (US) —
2 Aaron Gibby Stanford SystemX Alliance Stanford University (US) —
3 Zheng Wang Stanford SystemX Alliance Stanford University (US)
4 Tze Wee Chen Stanford SystemX Alliance Stanford University (US) —
5 Shinobu Fujita Toshiba (Japan) (JP) —
6 Peter B. Griffin Stanford SystemX Alliance Stanford University (US)
7 Yoshio Nishi Stanford SystemX Alliance Stanford University (US)
8 S.S. Wong Stanford SystemX Alliance Stanford University (US)
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