Composition-modulated anti-ambipolar behavior enabled by two…

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  • DOI 10.1039/d5nh00508f
  • PMID https://pubmed.ncbi.nlm.nih.gov/41230571
  • OpenAlex ID W4415572608
  • Type Article
  • Language EN
  • Published 27 Oct 2025
  • Volume 11 (2)
  • Pages 572–584
  • Source Nanoscale Horizons
  • Publisher Royal Society of Chemistry
  • FWCI 0.81
  • Countries 1
  • Institutions 3
  • Added 28 Oct 2025
  • Updated 22 Oct 2026
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Composition-modulated anti-ambipolar behavior enabled by two-dimensional GeS x Se 1− x /SnS 2 van der Waals heterostructures for high-performance logic inverters

Article 2025 EN

= 0.29, while the device with an S-rich AAT delivered a low static power of 12.1 pW, which is attributed to the optimization of band engineering and the low driving voltage under the bottom h-BN/Au structure. This work contributes insights into the expansion of alloy engineering in the construction of high-performance multi-valued logic inverters.

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14 authors
#AuthorInstitutionsORCID
1 Yanhong Long South China Normal University (CN) —
2 Qunrui Deng South China Normal University (CN)
3 Shengdi Chen South China Normal University (CN)
4 Yingbo He South China Normal University (CN) —
5 Yue Wang South China Normal University (CN)
6 Zhaoqiang Zheng Guangdong University of Techno… (CN)
7 Nengjie Huo South China Normal University (CN)
8 Dongxiang Luo Guangzhou University (CN)
9 Xiao Liu South China Normal University (CN)
10 Yiming Sun South China Normal University (CN)
11 Zuxin Chen South China Normal University (CN)
12 Mengmeng Yang South China Normal University (CN)
13 Tao Zheng South China Normal University (CN)
14 Wei Gao South China Normal University (CN)

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