Progress and outlook for MRAM technology

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1999
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  • DOI 10.1109/intmag.1999.837837
  • OpenAlex ID W4240270680
  • Type Conference-abstract
  • Language EN
  • Published 01 Jan 1999
  • Pages GA02
  • Source IEEE International Magnetics Conference
  • Countries 1
  • Institutions 1
  • Added 10 Oct 2025
  • Updated 27 Sep 2026
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Progress and outlook for MRAM technology

Conference-abstract 1999 EN

Each of the existing high volume semiconductor memory technologies has important advantages as well as some shortcomings. For example, SRAM has fast read and write speeds, hut it is volatile and requires large cell areas. DRAM has high density with moderate read/write speeds, however it is also volatile and quires periodic refresh of the storage capacitor. FLASH is a nonvolatile technology that ha…

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6 authors
#AuthorInstitutionsORCID
1 S. Tehrani Motorola (United States) (US) —
2 Jon M. Slaughter Motorola (United States) (US) —
3 E. Y. Chen Motorola (United States) (US) —
4 Mark Durlam Motorola (United States) (US) —
5 J. Shi Motorola (United States) (US) —
6 Mark DeHerrera Motorola (United States) (US) —

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