Progress and outlook for MRAM technology
Established
13
Citations0
Refs1999
Year
Search Works
Work Details
- DOI 10.1109/intmag.1999.837837
- OpenAlex ID W4240270680
- Type Conference-abstract
- Language EN
- Published 01 Jan 1999
- Pages GA02
- Source IEEE International Magnetics Conference
- Countries 1
- Institutions 1
- Added 10 Oct 2025
- Updated 27 Sep 2026
External Links
MENU
0
Progress and outlook for MRAM technology
Conference-abstract 1999 EN
Each of the existing high volume semiconductor memory technologies has important advantages as well as some shortcomings. For example, SRAM has fast read and write speeds, hut it is volatile and requires large cell areas. DRAM has high density with moderate read/write speeds, however it is also volatile and quires periodic refresh of the storage capacitor. FLASH is a nonvolatile technology that ha…
13
Citations
0
References
6
Authors
0.00
FWCI
Citations by Year
Last 6 yearsTopics
Keywords
Authors & Affiliations
6 authors| # | Author | Institutions | ORCID |
|---|---|---|---|
| 1 | S. Tehrani | Motorola (United States) (US) | — |
| 2 | Jon M. Slaughter | Motorola (United States) (US) | — |
| 3 | E. Y. Chen | Motorola (United States) (US) | — |
| 4 | Mark Durlam | Motorola (United States) (US) | — |
| 5 | J. Shi | Motorola (United States) (US) | — |
| 6 | Mark DeHerrera | Motorola (United States) (US) | — |
Related Works
10Data: OpenAlex