Write-Efficient STT/SOT Hybrid Triple-Level Cell for High-De…

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  • DOI 10.1109/ted.2019.2963421
  • OpenAlex ID W3002927788
  • Type Article
  • Language EN
  • Published 23 Jan 2020
  • Volume 67 (4)
  • Pages 1460–1465
  • Source IEEE Transactions on Electron Devices
  • Publisher Institute of Electrical and Electro…
  • FWCI 1.42
  • Countries 1
  • Institutions 1
  • Added 30 Jan 2020
  • Updated 24 Oct 2026
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Write-Efficient STT/SOT Hybrid Triple-Level Cell for High-Density MRAM

Article 2020 EN

Spin-transfer torque magnetic random access memory (STT-MRAM) offers nonvolatility, good scalability, high speed, and low-power benefits. Multilevel cell (MLC) is an efficient technology to boost the storage density of the STT-MRAM. However, the conventional MLC structure is not suitable for more than 2-b storage due to inefficient multistep read/write operations. In this article, combining the em…

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1.42

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6 authors
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1 Yansong Xu Beihang University (CN)
2 Bi Wu Beihang University (CN)
3 Zhaohao Wang Beihang University (CN)
4 Yijiao Wang Beihang University (CN)
5 Youguang Zhang Beihang University (CN)
6 Weisheng S. Zhao Beihang University (CN)
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