Fast-Write Resistive RAM (RRAM) for Embedded Applications

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54
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2010
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  • DOI 10.1109/mdt.2010.96
  • OpenAlex ID W2168602049
  • Type Article
  • Language EN
  • Published 01 Oct 2010
  • Volume 28 (1)
  • Pages 64–71
  • Source IEEE Design & Test of Computers
  • Publisher Institute of Electrical and Electro…
  • FWCI 3.49
  • Countries 1
  • Institutions 4
  • Added 10 Oct 2025
  • Updated 12 Oct 2026
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Fast-Write Resistive RAM (RRAM) for Embedded Applications

Article 2010 EN

Especially for microcontroller and mobile applications, embedded nonvolatile memory is an important technology offering to reduce power and provide local persistent storage. This article describes a new resistive RAM device with fast write operation to improve the speed of embedded nonvolatile memories.

54

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11

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13

Authors

3.49

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13 authors
#AuthorInstitutionsORCID
1 Shyh-Shyuan Sheu National Central University (TW) Industrial Technology Research… (TW) —
2 Kuo‐Hsing Cheng National Central University (TW)
3 Meng‐Fan Chang National Tsing Hua University (TW)
4 Pei-Chia Chiang Industrial Technology Research… (TW) —
5 Wen-Pin Lin Industrial Technology Research… (TW)
6 Heng-Yuan Lee National Tsing Hua University (TW) Industrial Technology Research… (TW) —
7 Pang-Shiu Chen Minghsin University of Science… (TW) —
8 Yu‐Sheng Chen Industrial Technology Research… (TW)
9 Tai-Yuan Wu Industrial Technology Research… (TW) —
10 Frederick T. Chen Industrial Technology Research… (TW) —
11 Keng-Li Su Industrial Technology Research… (TW) —
12 Ming‐Jer Kao Industrial Technology Research… (TW)
13 Ming‐Jinn Tsai Industrial Technology Research… (TW) —
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