Nanometer-Scale ${\rm HfO}_{x}$ RRAM

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56
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2013
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Work Details
  • DOI 10.1109/led.2013.2265404
  • OpenAlex ID W2001744188
  • Type Article
  • Language EN
  • Published 03 Jul 2013
  • Volume 34 (8)
  • Pages 1005–1007
  • Source IEEE Electron Device Letters
  • Publisher Institute of Electrical and Electro…
  • FWCI 4.79
  • Countries 1
  • Institutions 1
  • Added 10 Oct 2025
  • Updated 16 Oct 2026
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Nanometer-Scale ${\rm HfO}_{x}$ RRAM

Article 2013 EN

HfOx-based resistive random access memory with an active area down to few nanometers in diameter is fabricated and characterized. Scaling trends for forming and switching characteristics are presented. For the smallest device with an active area of few nanometers in diameter, ac switching endurance of 108cycles with more than 100 × resistance window is demonstrated. In addition, multiple resistanc…

56

Citations

12

References

4

Authors

4.79

FWCI

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4 authors
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1 Zhiping Zhang Stanford University (US)
2 Yi Wu Stanford University (US)
3 H.‐S. Philip Wong Stanford University (US)
4 S.S. Wong Stanford University (US)
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