Ferroelectric PZT Thin Films For Low-voltage Nonvolatile Mem…
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- DOI 10.1109/nvmt.1993.696948
- OpenAlex ID W1657895706
- Type Conference-paper
- Language EN
- Published 24 Aug 2005
- Pages 44–47
- Countries 1
- Institutions 1
- Added 10 Oct 2025
- Updated 14 Oct 2026
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Ferroelectric PZT Thin Films For Low-voltage Nonvolatile Memory
Conference-paper 2005 EN
This study investigates the scaling potential of sol gelderived ferroelectric lead zirconate titanate (PZT) thin films for future nonvolatile memories. Ferroelectric hysteresis loops are exploited to demonstrate nonvolatile memory operation at internal voltages as low as 1.5V with a readwrite endurance cycles. Fenroelectric PZT capacitor technology holds promise as an alternative to conventional f…
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5 authors| # | Author | Institutions | ORCID |
|---|---|---|---|
| 1 | Reza Moazzami | Motorola (United States) (US) | — |
| 2 | P.D. Maniar | Motorola (United States) (US) | — |
| 3 | Robert E. Jones | Motorola (United States) (US) | — |
| 4 | A.C. Campbell | Motorola (United States) (US) | — |
| 5 | C. Joseph Mogab | Motorola (United States) (US) | — |
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