SA
S. J. Ahn

Established

9
Works
65
Citations
4
H-Index
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Author Statistics
  • OpenAlex ID A5044211125
  • i10-Index 3
  • 2-Yr Mean Citedness 0.00
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S. J. Ahn

Also known as: S. J. Ahn, Sang-Bin Ahn, Sungyoung Ahn

9

Total Works

65

Citations

4

H-Index

3

i10-Index

Citation & Works Trend by Year
5 years active
Top Research Topics
Semiconductor materials and devices (6) Advancements in Semiconductor Devices and Circuit Design (5) Magnetic properties of thin films (3) Advanced Memory and Neural Computing (3) Thin-Film Transistor Technologies (2)
Recent Publications
9 shown
Year Publication Title Citations Action
2026 Improved Row Hammer and Passing Gate Effect Properties With Impurity Reduction of TiN Single Metal Word-Line in Modern DRAM IEEE Access 0
2025 Wafer-level magnetic shielding for highly reliable STT-MRAM with enhanced magnetic immunity Technical digest - International Electron Devices Meeting/Technical digest 0
2025 World First 8nm 128Mb Embedded STT-MRAM for Automotive Application Technical digest - International Electron Devices Meeting/Technical digest 1
2025 Scalable Fabrication and Demonstration of the First Fully Integrated 14nm 2-Stack SOM (Selector Only Memory) Device IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) 5
2025 High Performance and Reliable 4F2 IGZO Vertical Channel Transistor (VCT) with Extremely Low Contact Resistance and 10 year BTI lifetime for sub-10nm DRAM IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) 12
2024 Key Technologies of Scaling Embedded MRAM to 8nm Logic and Beyond for Automotive Application Technical digest - International Electron Devices Meeting/Technical digest 10
2024 Exploring Innovative IGZO-channel based DRAM Cell Architectures and Key Technologies for Sub-10nm Node IEEE International Memory Workshop (IMW) 32
2015 Efficient management of PCM-based swap storage IEICE Electronics Express 1
2000 Highly manufacturable 4Gb DRAM using 0.11μm DRAM technology 5

Data source: OpenAlex API